![]() Spin relaxation of conduction electrons in noncentrosymmetric semiconductors. Spin relaxation of electrons due to scattering by holes. Acoustically driven storage of light in a quantum well. Spin-orbit coupling effects in zinc blende structures. Spin relaxation dynamics of quasiclassical electrons in ballistic quantum dots with strong spin-orbit coupling. Quantum entanglement for acoustic spintronics. Single-qubit gates and measurements in the surface acoustic wave quantum computer. Acoustically induced potential dots in GaAs quantum wells. Acoustically induced dynamic potential dots. Spin transport in quantum wells by surface acoustic waves. Coherent spin manipulation without magnetic fields in strained semiconductors. Lateral drag of spin coherence in gallium arsenide. Spin-transport dynamics of optically spin-polarized electrons in GaAs quantum wires. Spin relaxation quenching in semiconductor quantum dots. Spin relaxation in GaAs(110) quantum wells. Ohno, Y., Terauchi, R., Adachi, T., Matsukura, F. Resonant spin amplification in n-type GaAs. The coherent manipulation of the precession frequency is also achieved by applying an external magnetic field. In the absence of an applied magnetic field, we observe the precession of the electron spin induced by the internal magnetic field associated with the spin splitting of the conduction band (Dresselhaus term) 13. Photogenerated spin carriers transported by the DQDs in undoped GaAs (001) quantum wells exhibit a spin coherence length exceeding 100 μm, which is attributed to the simultaneous control of the carrier density and the dimensionality 12 by the DQDs during transport. Here, we introduce a new method for the coherent transport of spin-polarized electronic wave packets using dynamic quantum dots (DQDs) created by the piezoelectric field of coherent acoustic phonons 8, 9, 10, 11. Previous work in GaAs has focused on controlling the carrier density 1, crystallographic orientation 2 and dimensionality 3, 4 to limit the electron spin decoherence and allow transport over long distances 4, 5, 6, 7. Spin transport and manipulation in semiconductors have been studied intensively with the ultimate goal of realizing spintronic devices.
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